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ON Semiconductort
SWITCHMODEt Series NPN Silicon Power Transistor
. . . designed for high speed, high current, high power applications.
BUV20 BUV60
50 AMPERES NPN SILICON POWER METAL TRANSISTOR 125 VOLTS 250 WATTS
* High DC current gain: * *
hFE min = 20 at IC = 25 A = 10 at IC = 50 A Low VCE(sat): VCE(sat) max. = 0.6 V at IC = 25 A = 0.9 V at IC = 50 A Very fast switching times: TF = 0.25 s at IC = 50 A
Rating Symbol VCBO VEBO VCEX BUV20 160 160 150 BUV60 260 260 260 Unit Vdc Vdc Vdc Vdc Vdc Adc Apk Adc
DERATING FACTOR
II II IIIIIIIIIIIIIIIIIIIIIII II I I I I II I IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII II I I I I I II II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII II I I II II I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII I III I I I I I II I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII I II I II IIIIIIIIIIIIIIIIIIIIIII III I I I I IIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIII I II I I II I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII
MAXIMUM RATINGS
Collector-Emititer Voltage Collector-Base Voltage Emitter-Base Voltage VCEO(sus) 125 7 Collector-Emitter Voltage (VBE = -1.5 V) Collector-Emitter voltage (RBE = 100 ) VCER IC ICM IB Collector-Current -- Continuous -- Peak (PW v 10 ms) Base-Current continuous 50 60 10 Total Power Dissipation @ TC = 25_C PD 250 Watts _C Operating and Storage Junction Temperature Range TJ, Tstg -65 to 200
CASE 197A-05 TO-204AE (TO-3)
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case
Symbol JC
BUV20
BUV60
Unit
0.7
_C/W
1.0
0.8 0.6 0.4 0.2
0
40
80 120 TC, TEMPERATURE (C)
160
200
Figure 1. Power Derating
(c) Semiconductor Components Industries, LLC, 2001
1
May, 2001 - Rev. 10
Publication Order Number: BUV20/D
IIII I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I IIII I III I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I III I III I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I III I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I III I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I III I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIII I I I III I III I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIII I I I III I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I I III I III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII
1
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
SWITCHING CHARACTERISTICS (Resistive Load)
DYNAMIC CHARACTERISTICS
ON CHARACTERISTICS1
SECOND BREAKDOWN
OFF CHARACTERISTICS1
Pulse Test: Pulse Width v 300 s, Duty Cycle v 2%.
Fall Time
Storage Time
Turn-on Time
Current Gain -- Bandwidth Product (VCE = 15 V, IC = 2 A, f = 4 MHz)
Base-Emitter Saturation Voltage (IC = 50 A, IB = 5 A) (IC = 60 A, IB = 7.5 A)
Collector-Emitter Saturation Voltage (IC = 25 A, IB = 1.25 A) (IC = 50 A, IB = 5 A) (IC = 60 A, IB = 7.5 A)
Collector-Emitter Saturation Voltage (IC = 25 A, IB = 2.5 A) (IC = 50 A, IB = 5 A)
DC Current Gain (IC = 25 A, VCE = 2 V) (IC = 50 A, VCE = 4 V)
Second Breakdown Collector Current with base forward biased (VCE = 20 V, t = 1 s) (VCE = 40 V, t = 1 s)
Emitter-Cutoff Current (VEB = 5 V)
Emitter-Base Reverse Voltage (IE = 50 mA)
Collector-Emitter Cutoff Current (VCE = 100 V)
Collector Cutoff Current at Reverse Bias (VCE = 140 V, VBE = - 1.5 V) (VCE = 140 V, VBE = - 1.5 V, TC = 125_C) (VCE = 260 V, VBE = - 1.5 V)
Collector-Emitter Sustaining Voltage (IC = 200 mA, IB = 0, L = 25 mH)
Base-Emitter Saturation Voltage (IC = 50 A, IB = 5 A)0
Characteristic
(IC = 50 A IB1 = IB2 = 5 A, A, A VCC = 30 V, RC = 0.6 )
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BUV20 BUV60
BUV20, BUV60
BUV20, BUV60
BUV20, BUV60
2 BUV20 BUV20 BUV60 BUV60 BUV60 BUV60 BUV20 BUV20 BUV20 BUV20 BUV60 BUV60 BUV20 BUV20 VCEO(sus) Symbol VCE(sat) VCE(sat) VBE(sat) VBE(sat) VEBO ICEO IEBO ICEX hFE IS/b ton fT ts tf Min 125 8.0 12 1.5 20 10 7 0.25 Max 1.2 1.5 1.6 1.8 0.9 0.9 1.2 2.0 0.6 1.2 1.0 3.0 3.0 12 60 - mAdc mAdc mAdc MHz Unit Vdc Vdc Vdc Vdc Adc Vdc s V
BUV20 BUV60
100 50 IC, COLLECTOR CURRENT (A)
10
1
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 2 is based on TC = 25_C. TJ(pk) is variable depending on power level. Second breakdown limitations do not derate the same as thermal limitations. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
1 10 100 125 VCE, COLLECTOR-EMITTER VOLTAGE (V)
Figure 2. Active Region Safe Operating Area
2.0 IC/IB = 10 1.6 V, VOLTAGE (V) 1.2 0.8 0.4 0 VCE(sat) VBE(sat)
100 VCE = 4 V 80 60 40 20 0 100
1
10
1
10
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 3. "On" Voltages
Figure 4. DC Current Gain
t, TIME ( s)
3.0 2.0 1.0 0.4 0.3 0.2 0 10 20 tS ton
VCC = 30 V IC/IB1 = 10 IB1 = IB2 RC IB2 IB1 tF
RC -- Non inductive resistance
VCC 104 F
VCC = 30 V RC = 0.6
30
40
50
IC, COLLECTOR CURRENT (A)
Figure 5. Resistive Switching Performance
Figure 6. Switching Times Test Circuit
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3
BUV20 BUV60
PACKAGE DIMENSIONS TO-204AE (TO-3) CASE 197A-05 ISSUE J
A N C -T- E D
2 PL SEATING PLANE
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.530 REF 0.990 1.050 0.250 0.335 0.057 0.063 0.060 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC 0.760 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 38.86 REF 25.15 26.67 6.35 8.51 1.45 1.60 1.53 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC 19.31 21.08 3.84 4.19 30.15 BSC 3.33 4.77
K
M
0.30 (0.012)
TQ
M
Y
M
U V
2
L G
-Y-
H
B
1
-Q- 0.25 (0.010)
M
TY
M
SWITCHMODE is a trademark of Semiconductor Components Industries, LLC (SCILLC)
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
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4
BUV20/D

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